Wafer-scale sub-micron lithography

被引：20

作者：

Khang, DY ^{[1
]}

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wafer scale imprint lithography is introduced and demonstrated. Pattern features down to 100 nm in size are shown to be lithographed over the entire area of a silicon wafer 4 in. in diameter. An asymmetric heating and quenching cycle is used for the pattern fidelity. Simple mechanical arrangements make the wafer-scale lithography possible. (C) 1999 American Institute of Physics. [S0003- 6951(99)03443-9].

引用

页码：2599 / 2601

页数：3

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