Direct nano-printing on Al substrate using a SiC mold

被引:88
作者
Pang, SW
Tamamura, T
Nakao, M
Ozawa, A
Masuda, H
机构
[1] NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
[2] NTT Adv Technol Corp, Atsugi, Kanagawa 24301, Japan
[3] Tokyo Metropolitan Univ, Dept Ind Chem, Hachioji, Tokyo 19203, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期
关键词
D O I
10.1116/1.590024
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanostructures in AZ were generated by printing with hard SiC molds. This nano-printing technology replaces the lithography and the etching or deposition processes to produce patterns directly in metal. Dots, short lines, and long lines were formed in the SiC molds by electron beam lithography and reactive ion etching. High aspect ratio features as small as 40 nm with depth up to 840 nm were patterned in the SiC molds. By pressing the SiC mold onto the Al substrate at room temperature, nanostructures in the SIC mold were reproduced accurately and uniformly in Al. Large arrays of nanostructures down to 40 nm were printed in Al with similar results for dots, short lines, and long lines. Using atomic force microscopy to analyze the cross sections of the SiC molds and printed Al nanostructures, depth dependence on feature size was observed. This nand-printing technology simplifies the processes for generating nanostructures with high throughput and high uniformity. (C) 1998 American Vacuum Society.
引用
收藏
页码:1145 / 1149
页数:5
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