Nanocomposite resist system

We propose a nanocomposite resist system that incorporates sub-nm carbon particles into a resist film to enable an ultrathin film resist process for nanometer pattern fabrication. Fullerene (C-60) is found to be an excellent material for incorporation in view of its etching resistance, dissolution inhibiting effect, molecular size, and composite preparation. A nanocomposite system of C-60 and an electron-beam positive resist, ZEP520, show enhancements in both pattern contrast and etching resistance and provide 50 nm patterns in a 50-nm-thick film with a sensitivity of similar to 50 mu C/cm(2). Furthermore, a C-60-incorporated chemically amplified resist, SAL601, shows strong environmental stabilization in postexposure delay (<10% after five days) presumably due to the reduction of free volume in the closely packed nanocomposite film. (C) 1997 American Institute of Physics.