AMORPHOUS-CARBON FILMS AS RESIST MASKS WITH HIGH REACTIVE ION ETCHING RESISTANCE FOR NANOMETER LITHOGRAPHY

被引：51

作者：

KAKUCHI, M

HIKITA, M

TAMAMURA, T

机构：

来源：

关键词：

D O I：

10.1063/1.96683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：835 / 837

页数：3

共 11 条

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