POLY (PHENYL METHACRYLATE-CO-METHACRYLIC ACID) AS A DRY-ETCHING DURABLE POSITIVE ELECTRON RESIST

被引：24

作者：

HARADA, K

KOGURE, O

MURASE, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：518 / 524

页数：7

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