CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY

被引：104

作者：

IMAMURA, S

机构：

[1] Nippon Telegraph and Telephone Public Corporation, Ibaraki Electrical Communication Laboratory, Tokai, Ibaraki

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 09期

关键词：

deep ultraviolet lithography; dry etching-resistant resist; electron lithography; negative resist; x-ray lithogravhy;

D O I：

10.1149/1.2129344

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

收藏

页码：1628 / 1630

页数：3

相关论文

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