MOLECULAR PARAMETERS AND LITHOGRAPHIC PERFORMANCE OF POLY(GLYCIDYL METHACRYLATE-CO-ETHYL ACRYLATE) - NEGATIVE ELECTRON RESIST

被引：57

作者：

THOMPSON, LF ^{[1
]}

BALLANTYNE, JP ^{[1
]}

FEIT, ED ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.568517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1280 / 1283

页数：4

共 10 条

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[2] CHARLESBY A, 1960, ATOMIC RADIATION POL
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[4] FUNDAMENTAL ASPECTS OF ELECTRON-BEAM LITHOGRAPHY .1. DEPTH-DOSE RESPONSE OF POLYMERIC ELECTRON-BEAM RESISTS
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[6] HERRIOTT DR, 1975, IEEE T ELECTRON DEV, V22, P358
[7] APPLICATIONS OF ELECTRON-BEAM EXPOSURE SYSTEM
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) : 393 - 399
[8] THOMPSON LF, 1974, SOLID STATE TECHNOL, V17, P27
[9] LITHOGRAPHY AND RADIATION-CHEMISTRY OF EPOXY CONTAINING NEGATIVE ELECTRON RESISTS
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[10] UEBERREITER K, 1968, DIFFUSION POLYM, P220