Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3

被引：223

作者：

Hajnal, Z

Miró, J

Kiss, G

Réti, F

Deák, P

Herndon, RC

Kuperberg, JM

机构：

[1] Tech Univ Budapest, Dept Atom Phys, Ctr Hungarian Amer Environm Res Studies & Exchang, H-1111 Budapest, Hungary

[2] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.371289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on semiempirical quantum-chemical calculations, the electronic band structure of beta-Ga2O3 is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were calculated. Using the calculated donor level positions of the vacancies, the high temperature n-type conduction is explained. The vacancy concentration is obtained by fitting to the experimental resistivity and electron mobility. (C) 1999 American Institute of Physics. [S0021-8979(99)03318-6].

引用

页码：3792 / 3796

页数：5

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