CHARACTERIZATION AND CRYSTALLITE GROWTH OF SEMICONDUCTING HIGH-TEMPERATURE-STABLE GA2O3 THIN-FILMS

被引：44

作者：

FLEISCHER, M

MEIXNER, H

机构：

[1] Siemens AG, Research Laboratories, Munich 83, 8000

来源：

关键词：

D O I：

10.1007/BF00736223

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：1728 / 1731

页数：4

共 10 条

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