Studies of field emission from bias-grown diamond thin films

被引:19
作者
Ding, MQ [1 ]
Gruen, DM
Krauss, AR
Auciello, O
Corrigan, TD
Chang, RPH
机构
[1] Argonne Natl Lab, Div Chem & Mat Sci, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Div Sci Mat, Argonne, IL 60439 USA
[3] Northwestern Univ, Dept Mat Sci, Evanston, IL 60208 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 02期
关键词
D O I
10.1116/1.590623
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated the field emission properties of diamond films grown under substrate bias conditions in a microwave plasma chemical vapor deposition system, with a substrate temperature of 800 degrees C, microwave power of 600 W, and a total pressure of 11 Torr. One group of films was grown with a substrate bias of -100 V in gas mixtures of 1% N-2 and 1%-20% CH4 in H-2, while a second group of films was grown with a substrate bias ranging from + 100 to -150 V in a gas mixture of 1% N-2 - 10% CH4 - 89% H-2. The field emission performance in terms of threshold field and emission current improved considerably as a function of increasing CH4 concentration and negative bias voltage. Ultraviolet Raman analysis showed that the field emission enhancement resulting from an increase in CH4 concentration from 1% to 5% correlates with a decrease in the sp(3) bonding character in the diamond film. The dependence of field emission on negative bias voltage appears to be correlated with ion bombardment-induced damage in the film during growth. The scanning electron microscopy image of the film grown with -150 V bias showed: smaller surface topographic features as compared to films grown under 0 and + 100 V bias. The film grown with a bias of -150 V showed the lowest threshold field (similar to 2.0 V/mu m) corresponding to an emission current density of 12.7 mu A/cm(2). J vs Eo measurements across a length of 40 mm over the film showed a uniform threshold field (2.0 +/- 0.55 V/mu m). The film grown with a positive bias, (+ 100 V) showed a relatively poor field emission performance. (C) 1999 American Vacuum Society. [S0734-211X(99)08202-5].
引用
收藏
页码:705 / 709
页数:5
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