Barrier heights at the SnO2/Pt interface: In situ photoemission and electrical properties

被引：53

作者：

Koerber, Christoph ^{[1
]}

Harvey, Steven P. ^{[2
]}

Mason, Thomas O. ^{[2
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, Div Surface Sci, D-64287 Darmstadt, Germany

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

SURFACE SCIENCE | 2008年 / 602卷 / 21期

基金：

美国国家科学基金会;

关键词：

Tin oxide; Platinum; Schottky barrier; Photoelectron spectroscopy; Electrical transport measurement;

D O I：

10.1016/j.susc.2008.08.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The SnO2/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3246 / 3252

页数：7

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