Modelling polycrystalline semiconductor solar cells

被引：1895

作者：

Burgelman, M ^{[1
]}

Nollet, P ^{[1
]}

Degrave, S ^{[1
]}

机构：

[1] State Univ Ghent, Elect & Informat SYst ELIS, B-9000 Ghent, Belgium

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

solar cells; thin film; modelling; CdTe; chalcopyrite;

D O I：

10.1016/S0040-6090(99)00825-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overview is given of various electronic effects present in polycrystalline thin film solar cells, which do not occur in standard crystalline Si solar cells. It is explained how these effects are treated numerically in a numerical solar cell simulation tool, SCAPS, developed at the author's institute. The capabilities and limitations of SCAPS are discussed. Simulation examples of current-voltage, capacitance-voltage and capacitance-frequency characteristics are given. The agreement between the simulations and measurements is shown and discussed, both for CdTe and for Cu(In,Ga)Se-2 solar cells. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：527 / 532

页数：6

共 18 条

[1] [Anonymous], 1995, Proceedings of the 13th EU PVSEC
[2] [Anonymous], P 25 IEEE PHOT SPEC
[3] NUMERICAL MODELING OF TEXTURED SILICON SOLAR-CELLS USING PC-1D
BASORE, PA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) : 337 - 343
[4] Electronic behaviour of thin-film CdTe solar cells
Burgelman, M
Nollet, P
Degrave, S
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (02): : 149 - 153
[5] BURGELMAN M, 1994, P 12 EUR PHOT SOL EN, P1557
[6] FONASH S, 1979, COMMUN SOLID STATE E, V22, P907
[7] Lee Y. J., 1994, P 12 EUR PHOT SOL EN, P1561
[8] RANGE OF VALIDITY OF THE SURFACE-PHOTOVOLTAGE DIFFUSION LENGTH MEASUREMENT - A COMPUTER-SIMULATION
MCELHENY, PJ
ARCH, JK
LIN, HS
FONASH, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1254 - 1265
[9] Effects of the Au/CdTe back contact on IV and CV characteristics of Au/CdTe/CdS/TCO solar cells
Niemegeers, A
Burgelman, M
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2881 - 2886
[10] Niemegeers A, 1998, PROG PHOTOVOLTAICS, V6, P407, DOI 10.1002/(SICI)1099-159X(199811/12)6:6<407::AID-PIP230>3.0.CO

← 1 2 →