RANGE OF VALIDITY OF THE SURFACE-PHOTOVOLTAGE DIFFUSION LENGTH MEASUREMENT - A COMPUTER-SIMULATION

被引：107

作者：

MCELHENY, PJ ^{[1
]}

ARCH, JK ^{[1
]}

LIN, HS ^{[1
]}

FONASH, SJ ^{[1
]}

机构：

[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1254 / 1265

页数：12

共 14 条

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[8] THEORY AND EXPERIMENT ON THE SURFACE-PHOTOVOLTAGE DIFFUSION-LENGTH MEASUREMENT AS APPLIED TO AMORPHOUS-SILICON
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[9] IMPROVEMENT IN THE SURFACE PHOTOVOLTAGE METHOD OF DETERMINING DIFFUSION LENGTH IN THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON
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