THEORY AND EXPERIMENT ON THE SURFACE-PHOTOVOLTAGE DIFFUSION-LENGTH MEASUREMENT AS APPLIED TO AMORPHOUS-SILICON

被引：64

作者：

MOORE, AR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：222 / 228

页数：7

相关论文

共 20 条

[1] CALCULATION OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY DIODES
CHEN, I
LEE, S
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 487 - 489
[2] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &
[3] DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD
DRESNER, J
SZOSTAK, DJ
GOLDSTEIN, B
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 998 - 999
[4] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
GARTNER, WW
[J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87
[5] GOLDSTEIN B, PHILOS MAG
[6] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2550 - &
[7] CARRIER COLLECTION EFFICIENCY OF A-SIHX SCHOTTKY-BARRIER SOLAR-CELLS
GUTKOWICZKRUSIN, D
WRONSKI, CR
TIEDJE, T
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (02) : 87 - 89
[8] LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM
JOHNSON, EO
[J]. PHYSICAL REVIEW, 1958, 111 (01): : 153 - 166
[9] COLLECTION LENGTH OF HOLES IN A-SI-H BY SURFACE PHOTO-VOLTAGE USING A LIQUID SCHOTTKY-BARRIER
MOORE, AR
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 403 - 405
[10] PHOTOELECTROMAGNETIC EFFECT IN AMORPHOUS-SILICON
MOORE, AR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 327 - 330