DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD

被引:59
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DRESNER, J
SZOSTAK, DJ
GOLDSTEIN, B
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D O I
10.1063/1.92226
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O59 [应用物理学];
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页码:998 / 999
页数:2
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共 9 条
[2]   LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM [J].
JOHNSON, EO .
PHYSICAL REVIEW, 1958, 111 (01) :153-166
[3]   PHOTOELECTROMAGNETIC EFFECT IN AMORPHOUS-SILICON [J].
MOORE, AR .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :327-330
[4]  
Moss T.S., 1955, J ELECTRON CONTR, V1, P126, DOI 10.1080/00207215508961396
[6]   OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J].
STAEBLER, DL ;
WRONSKI, CR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3262-3268
[7]   REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].
STAEBLER, DL ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294
[8]   HOLE DIFFUSION LENGTH MEASUREMENTS IN DISCHARGE-PRODUCED A-SI-H [J].
STAEBLER, DL .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :387-390
[9]   SURFACE PHOTOVOLTAGE METHOD EXTENDED TO SILICON SOLAR CELL JUNCTION [J].
WANG, EY ;
BARAONA, CR ;
BRANDHOR.HW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :973-975