SURFACE PHOTOVOLTAGE METHOD EXTENDED TO SILICON SOLAR CELL JUNCTION

被引：34

作者：

WANG, EY

BARAONA, CR

BRANDHOR.HW

机构：

[1] WAYNE STATE UNIV,ELECT ENGN DEPT,DETROIT,MI 48202

[2] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 07期

关键词：

D O I：

10.1149/1.2401966

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：973 / 975

页数：3

相关论文

共 14 条

[1] BULLIS WM, 1970, MBS555 TECH NOT, P9
[2] BULK TRAPPING EFFECT ON CARRIER DIFFUSION LENGTH AS DETERMINED BY SURFACE PHOTOVOLTAGE METHOD - THEORY
CHOO, SC
SANDERSON, AC
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 609 - +
[3] CONCERNING POSSIBILITY OF OBSERVING LIFETIME-GRADIENT AND DEMBER PHOTOVOLTAGES IN SEMICONDUCTORS
ESPOSITO, RM
LOFERSKI, JJ
FLICKER, H
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 825 - &
[4] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2550 - &
[5] GROVE AS, 1961, PHYSICS TECHNOLOGY S
[6] HARRIS DO, PRIVATE COMMUNICATIO
[7] LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM
JOHNSON, EO
[J]. PHYSICAL REVIEW, 1958, 111 (01): : 153 - 166
[8] MEASUREMENT OF MINORITY CARRIER LIFETIMES WITH THE SURFACE PHOTOVOLTAGE
JOHNSON, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1349 - 1353
[9] Moss T.S., 1955, J ELECTRON CONTR, V1, P126, DOI 10.1080/00207215508961396
[10] INTERPRETATION OF STEADY-STATE SURFACE PHOTOVOLTAGE MEASUREMENTS IN EPITAXIAL SEMICONDUCTOR LAYERS
PHILLIPS, WE
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1097 - &