MEASUREMENT OF MINORITY CARRIER LIFETIMES WITH THE SURFACE PHOTOVOLTAGE

被引：80

作者：

JOHNSON, EO

机构：

来源：

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D O I：

10.1063/1.1722650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1349 / 1353

页数：5

共 8 条

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[3] TEMPORARY TRAPS IN SILICON AND GERMANIUM
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HORNBECK, JA
[J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153
[4] JOHNSON EL, UNPUBLISHED
[5] REVIEW OF GERMANIUM SURFACE PHENOMENA
KINGSTON, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114
[6] NELSON H, 1956, RCA REV, V17, P5
[7] MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON
STEVENSON, DT
KEYES, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 190 - 195
[8] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM
VALDES, LB
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1420 - 1423