BULK TRAPPING EFFECT ON CARRIER DIFFUSION LENGTH AS DETERMINED BY SURFACE PHOTOVOLTAGE METHOD - THEORY

被引：13

作者：

CHOO, SC

SANDERSON, AC

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 05期

关键词：

D O I：

10.1016/0038-1101(70)90140-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：609 / +

页数：1

相关论文

共 19 条

[1] BULLIS WM, 1968, AFMLTR68108 TECH REP
[2] CHOO SC, TO BE PUBLISHED
[3] GOLD AS A RECOMBINATION CENTRE IN SILICON
FAIRFIELD, JM
GOKHALE, BV
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +
[4] FRANKL DR, 1966, SURF SCI, V6, P115
[5] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2550 - &
[6] LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM
JOHNSON, EO
[J]. PHYSICAL REVIEW, 1958, 111 (01): : 153 - 166
[7] MEASUREMENT OF MINORITY CARRIER LIFETIMES WITH THE SURFACE PHOTOVOLTAGE
JOHNSON, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1349 - 1353
[8] GENERATION-RECOMBINATION NOISE OF NI-DOPED GE IN TEMPERATURE RANGE 350 DEGREES -100 DEGREES K AND CAPTURE CROSS-SECTIONS OF NI IN GE
KLAASSEN, FM
BOOY, HC
BLOK, J
[J]. PHYSICA, 1961, 27 (01): : 48 - &
[9] MANY A, 1965, SEMICONDUCTOR SURFAC, P197
[10] MATTIS RL, 1968, AFMLTR6881 TECH REP