Thermally induced changes in refractive index of As-S and Ag-As-S thin films

被引:3
作者
Dale, G [1 ]
Ewen, PJS [1 ]
Owen, AE [1 ]
机构
[1] Univ Edinburgh, Dept Elect & Elect Engn, Edinburgh EH9 3JL, Midlothian, Scotland
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1016/S0022-3093(99)00474-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Reflection measurements at infrared (IR) wavelengths are used to measure thermally induced changes in the optical thickness of as-deposited and annealed As33S67 and As40S60 thin films of thicknesses similar to 1.5 and similar to 16 mu m, respectively, deposited by vacuum thermal evaporation at a rate of similar to 0.1 nm s(-1). Measurements were also made on films of estimated composition As21Ag26S53 derived from Ag diffusion into the As33S67 Obtained by heating Ag/As33S67 bilayers. For annealed As-S films the relative change in optical thickness was approximately equal to the thermal expansion coefficient for the melt-quenched glass between room temperature and similar to 160 degrees C, indicating that the refractive index, n, has a negligible dependence on temperature. Tn contrast, the Ag-As-S system was found to have thermal coefficients similar to 2.5 times those for the annealed As-S films, which were not reduced by annealing. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:348 / 352
页数:5
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