Influence of oxygen in the deposition and annealing atmosphere on the characteristics of ITO thin films prepared by sputtering at room temperature

被引：104

作者：

Guillén, C ^{[1
]}

Herrero, J ^{[1
]}

机构：

[1] CIEMAT, Dept Energy, E-28040 Madrid, Spain

来源：

VACUUM | 2006年 / 80卷 / 06期

关键词：

ITO; sputtering; annealing; structure; morphology; optical properties;

D O I：

10.1016/j.vacuum.2005.10.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium till oxide (ITO) thin films have been grown onto glass substrates by sputtering at room temperature with various controlled oxygen and argon ratios used as reactive and sputter gases, respectively. After deposition, the samples have been annealed at 350 degrees C in the same sputtering chamber in vacuum or in air. The structure, morphology and electro-optical characteristics of the ITO coatings have been analyzed as a function of the oxygen added during deposition and of the annealing atmosphere by X-ray diffraction, atomic force microscopy, four points electrical measurements and spectrophotornetry. It has been found that the as-deposited amorphous samples crystallize in the cubic Structure by annealing. The optical transmittance and the electrical resistance decrease when the oxygen content in the deposition and the annealing atmosphere is reduced. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：615 / 620

页数：6

共 28 条

[1] Investigation of annealing effects on sol-gel deposited indium tin oxide thin films in different atmospheres [J].