Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament

被引：23

作者：

Teplin, CW ^{[1
]}

Wang, Q ^{[1
]}

Iwaniczko, E ^{[1
]}

Jones, KM ^{[1
]}

Al-Jassim, M ^{[1
]}

Reedy, RC ^{[1
]}

Branz, HM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 02期

关键词：

epitaxy; hot-wire chemical vapor deposition; thin film; silicon; solar cell;

D O I：

10.1016/j.jcrysgro.2005.11.055

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of 400 nm epitaxial silicon films on (10 0) silicon wafers at temperatures as low as 280 degrees C is demonstrated by use of a tantalum filament in hot-wire chemical vapor deposition. Systematic studies on the effects of substrate temperature and filament current show that the thickest epitaxial layers (450 nm) are grown at temperatures of similar to 380 degrees C and that the epitaxial thickness before breakdown (h(epi)) decreases when the filament current (and growth rate) is increased. Higher substrate temperatures reduce the strain in the epitaxial layer. There are significant differences in film quality when films are grown with tantalum versus tungsten filaments, suggesting that growth chemistry is sensitive to the filament material. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：414 / 418

页数：5

共 17 条

[1] The future of crystalline silicon films on foreign substrates [J].