The oxidation behaviour of mixed tungsten silicon sputtered coatings

被引：17

作者：

Louro, C ^{[1
]}

Cavaleiro, A ^{[1
]}

机构：

[1] Univ Coimbra, Dept Engn mecan, ICEMS, P-3030 Coimbra, Portugal

来源：

THIN SOLID FILMS | 1999年 / 343卷

关键词：

oxidation resistance; silicides; W-Si-N films; tungsten silicide; sputtering;

D O I：

10.1016/S0040-6090(98)01568-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W(69)Si(31) film crystallises at 750 degrees C as alpha-W and W(5)Si(3) phases whereas no significant structural transformations were observed for W(24)Si(21)N(55) him up to 1000 degrees C. Ln both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W(45)N(55) coatings. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：51 / 56

页数：6

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