Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals

被引：106

作者：

Bisri, Satria Zulkarnaen ^{[1
]}

Piliego, Claudia ^{[1
]}

Yarema, Maksym ^{[2
]}

Heiss, Wolfgang ^{[2
]}

Loi, Maria Antonietta ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 31期

基金：

欧洲研究理事会;

关键词：

colloidal nanocrystals; ambipolar transistor; layer-by-layer assembly; electrolyte gating; metal chalcogenides; QUANTUM-DOT SOLIDS; N-CHANNEL; PHOTOVOLTAICS; LAYERS;

D O I：

10.1002/adma.201205041

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4309 / 4314

页数：6

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