From Monolayer to Multilayer N-Channel Polymeric Field-Effect Transistors with Precise Conformational Order

被引：115

作者：

Fabiano, Simone ^{[2
]}

Musumeci, Chiara ^{[3
]}

Chen, Zhihua ^{[1
]}

Scandurra, Antonino ^{[3
]}

Wang, He ^{[4
]}

Loo, Yueh-Lin ^{[4
]}

Facchetti, Antonio ^{[1
]}

Pignataro, Bruno ^{[2
]}

机构：

[1] Polyera Corp, Skokie, IL 60077 USA

[2] Univ Palermo, Dipartimento Chim S Cannizzaro, I-90128 Palermo, Italy

[3] Superlab Consorzio Catania Ric, I-95121 Catania, Italy

[4] Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 07期

关键词：

monolayer field-effect transistor; semiconducting polymers; layered materials; charge transport; THIN-FILMS; CHARGE-TRANSPORT; MOBILITY; POLYTHIOPHENE; TEMPERATURE; INTERFACES; TEXTURE; GROWTH;

D O I：

10.1002/adma.201103800

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schafer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.

引用

页码：951 / +

页数：7

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