Reach-through band bending in semiconductor thin films

被引：14

作者：

Roussillon, Y ^{[1
]}

Giolando, DM

Karpov, VG

Shvydka, D

Compaan, AD

机构：

[1] Univ Toledo, Dept Chem, Toledo, OH 43606 USA

[2] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 16期

关键词：

D O I：

10.1063/1.1803950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a phenomenon of reach-through band bending in thin film semiconductors. It occurs through generation of defects that change the semiconductor work function. This translates the effect of the metal presence through the semiconductor film and induces a Schottky barrier in another semiconductor tangent to the film on the opposite side (reach-through band bending). We have found experimental evidence of this effect in CdTe photovoltaics. (C) 2004 American Institute of Physics.

引用

页码：3617 / 3619

页数：3

共 12 条

[1] An alternative model for V, G and T dependence of CdTe solar cells IV characteristics [J].

Agostinelli, G ;

Bätzner, DL ;

Burgelman, M .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :744-747

[2] Determination of Cu in CdTe/CdS devices before and after accelerated stress testing [J].

Asher, SE ;

Hasoon, FS ;

Gessert, TA ;

Young, MR ;

Sheldon, P ;

Hiltner, J ;

Sites, J .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :479-482

[3]

Bube R.H., 1998, PHOTOVOLTAIC MAT

[4] High efficiency CSSCdTe solar cells [J].

Ferekides, CS ;

Marinskiy, D ;

Viswanathan, V ;

Tetali, B ;

Palekis, V ;

Selvaraj, P ;

Morel, DL .

THIN SOLID FILMS, 2000, 361 (361) :520-526

[5]

Gloeckler M, 2003, WORL CON PHOTOVOLT E, P491

[6]

Kestner JM, 2002, MATER RES SOC SYMP P, V730, P49

[7]

Luque A., 2003, Handbook of Photovoltaic Science and Engineering

[8]

Meyers P., 1987, U.S. patent, Patent No. [4,710 589, 4710589]

[9] MODIFICATION OF STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF CDS THIN-FILMS BY CU DOPING [J].

SEBASTIAN, PJ ;

OCAMPO, M .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4548-4551

[10]

Sze S. M., 1981, PHYS SEMICONDUCTOR D

← 1 2 →