An alternative model for V, G and T dependence of CdTe solar cells IV characteristics

被引：16

作者：

Agostinelli, G ^{[1
]}

Bätzner, DL ^{[1
]}

Burgelman, M ^{[1
]}

机构：

[1] IMEC VZW, MCP ISC, Louvain, Belgium

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190672

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

It is generally assumed that the main features of CdTe IV curves (rollover, crossover) depend on a reverse diode located at the back contact.. The front. region of CdTe solar cells can play an equally important role in determining voltage, irradiance and temperature dependence of the IV characteristics. We propose a model of current transport that relies on the presence of a light and temperature dependent majority carrier barrier in the band diagram. We infer that this barrier forms as a consequence of intermixing at the TCO/CdS and CdS/CdTe interfaces and compensation of donors in CdS. Numerical simulation gives consistent results with the observed measurement characteristics.

引用

页码：744 / 747

页数：4

共 10 条

[1]

AGOSTINELLI G, IN PRESS THIN SOLID

[2]

AGOSTINELLI G, 2001, P 17 EUR PVSEC

[3]

BATZNER DL, IN PRESS THIN SOLID

[4]

BATZNER DL, 2001, MAT RES SOC S P, V668