Stable operation of InGaAs/InGaP/AlGaAs (lambda=1020 nm) laser diodes

被引：4

作者：

Erbert, G ^{[1
]}

Beister, G ^{[1
]}

Bugge, F ^{[1
]}

Maege, J ^{[1
]}

Ressel, P ^{[1
]}

Sebastian, J ^{[1
]}

Vogel, K ^{[1
]}

Wenzel, H ^{[1
]}

Weyers, M ^{[1
]}

机构：

[1] FERDINAND BRAUN INST HOCHFREQUENZTECH,D-12489 BERLIN,GERMANY

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 09期

关键词：

semiconductor junction lasers; reliability;

D O I：

10.1049/el:19970502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes uas suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The lone-term behaviour of such laser diodes was tested at 40 degrees C and 100 mW emission power over 1000 h, showing degradation rates of between 1.3 x 10(-5)/h and 3.6 x 10(-5)/h without any visible facet damage.

引用

页码：778 / 779

页数：2

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