Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions

被引：28

作者：

Garrido, B ^{[1
]}

Samitier, J ^{[1
]}

Bota, S ^{[1
]}

Moreno, JA ^{[1
]}

Montserrat, J ^{[1
]}

Morante, JR ^{[1
]}

机构：

[1] CSIC,CNM,BELLATERRA 08193,SPAIN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.363998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The damage created in SiO2 layers by low-energy Ar ions (130 keV) and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. We show that two dose thresholds for damage are encountered: At 10(14) cm(-2) damage saturates sind for doses above 10(17) cm(-2) sputtering effects dominate. Annealing at high temperatures (1100 degrees C) restores the structure of the initial nonimplanted oxide only for doses below the second threshold, although some disorder remains. Electroluminescence measurements show that annealing is able to eliminate electrically active defects. For implantation doses greater than 10(17) cm(-2) annealing is unable to restore the structure completely as sputtering effects create a depleted oxygen layer at the surface and substoichiometric defects appear. The presence of microcavities created by the Ar atoms at such high doses may affect the annealing behavior. (C) 1997 American Institute of Physics.

引用

页码：126 / 134

页数：9

共 24 条

[1] STRUCTURAL INVESTIGATION OF SILICA-GEL FILMS BY INFRARED-SPECTROSCOPY [J].