ETCHING RATE MODIFICATION IN SILICON-OXIDE BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING

被引：12

作者：

DOMINGUEZ, C ^{[1
]}

GARRIDO, B ^{[1
]}

MONTSERRAT, J ^{[1
]}

MORANTE, JR ^{[1
]}

SAMITIER, J ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT FIS APLICADA & ELECTRON,LCMM,E-08028 BARCELONA,SPAIN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90800-L

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work we present the radiation damage effects produced by argon ion implantation on thermally grown silicon dioxide and its evolution with annealing treatments. The etching rate measurements obtained with a buffered HF solution have been correlated with the structural network damage characterized by infrared spectroscopy. Two mechanisms that produce an increase of etching rate with dose have been found: the structural damage and the formation of nonstoichiometric layers.

引用

页码：1367 / 1370

页数：4

共 9 条

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