ION-IMPLANTATION INDUCED STOICHIOMETRIC IMBALANCE IN SIO2

被引：11

作者：

OFFENBERG, M

BALK, P

机构：

[1] Technical Univ Aachen, Aachen, West Ger, Technical Univ Aachen, Aachen, West Ger

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

OXYGEN - SEMICONDUCTING SILICON - SEMICONDUCTOR DEVICES; MOS;

D O I：

10.1016/0169-4332(87)90101-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Carrier trapping was studied to understand the displacement damage caused by ion implantation in SiO//2. Implantation causes local departures from stoichiometry due to different recoil behavior of Si and O atoms. To avoid chemical interaction with the oxide network noble gas implants was used. It is shown that a fraction of the defects is not removed even after extended high temperature treatment. Data on isochronal annealing steps and on the spatial distribution of the non-stoichiometry are given.

引用

页码：265 / 271

页数：7

共 12 条

[1] MICROSCOPIC LOCATION OF ELECTRON TRAPS INDUCED BY ARSENIC IMPLANTATION IN SILICON DIOXIDE [J].