STOICHIOMETRIC DISTURBANCES IN COMPOUND SEMICONDUCTORS DUE TO ION-IMPLANTATION

被引：7

作者：

AVILA, RE

FUNG, CD

机构：

来源：

关键词：

D O I：

10.1063/1.337247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1602 / 1606

页数：5

共 13 条

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[5] DEPTH PROFILES OF FE AND CR IMPLANTS IN INP AFTER ANNEALING
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[6] GIBBONS JF, 1975, PROJECTED RANGE STAT
[7] FORMATION OF P+-LAYER IN GAAS BY DUAL IMPLANTATION OF ZN AND AS
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[8] Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153
[9] EFFECTS OF ANNEALING ON PROFILES OF ALUMINUM IMPLANTED IN SILICON-CARBIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 994 - 997
[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462