Epitaxial growth of ZnO films on lattice-matched ScAlMgO4(0001) substrates

被引：76

作者：

Tamura, K

Ohtomo, A

Saikusa, K

Osaka, Y

Makino, T

Segawa, Y

Sumiya, M

Fuke, S

Koinuma, H

Kawasaki, M

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] RIKEN, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800868, Japan

[3] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan

[4] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnO; lattice-matched substrate; ScAlMgO4; laser molecular-bram epitaxy; absorption spectra of exciton; acceptor doping;

D O I：

10.1016/S0022-0248(00)00059-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The use of lattice-matched (0.09%) hxagonal oxide substrate, ScAlMgO4, has considerably improved the quality of ZnO films grown by laser molecular-beam epitaxy. Surface morphology was extremely smooth as represented by atomically Bat terraces and 0.26 nm high steps corresponding to the charge neutral unit of ZnO. Crystallinity was comparable to that of bulk single crystals: full-width at half-maximum value of ZnO(0 0 0 2) rocking curve was 39 arcsec. Optical absorption spectra showed clear splitting of A- and B-exciton lines, indicating low damping. Residual carrier concentration in pristine films was as low as 10(15) cm(-3) with keeping high electron mobility of similar to 100 cm(2)/Vs. Therefore, the ZnO films grown on ScAlMgO4(0001) substrates can be a starting point for realizing p-type ZnO. In fact, high concentration (similar to 10(21) cm(-3)) nitrogen can be doped with keeping high crystallinity. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：59 / 62

页数：4

共 5 条

[1] Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrystal thin films [J].