Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates

被引：255

作者：

Ohtomo, A ^{[1
]}

Tamura, K

Saikusa, K

Takahashi, K

Makino, T

Segawa, Y

Koinuma, H

Kawasaki, M

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan

[2] Shinkosha Co Ltd, Yokohama, Kanagawa 2470007, Japan

[3] RIKEN, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan

[4] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[5] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice-matched (Delta a/a=0.09%) ScAlMgO4(0001) substrates were employed to grow single crystalline quality ZnO films by laser molecular-beam epitaxy. Extremely smooth surface represented by atomically flat terraces and half unit cell (0.26 nm) high steps and extremely small orientation fluctuations both in-plane (< 0.02 degrees) and out-of-plane (< 0.01 degrees) are achieved. The films have high mobility (similar to 100 cm(2)/V s) together with low residual carrier concentration (similar to 10(15) cm(-3)). Excellent optical properties, including a clear doublet of A and B exciton peaks in absorption spectra, were also observed. These features could not be simultaneously achieved for ZnO films grown on sapphire(0001) having a large lattice mismatch (Delta a/a=18%). (C) 1999 American Institute of Physics. [S0003-6951(99)05743-5].

引用

页码：2635 / 2637

页数：3

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