Synthesis and characterization of Pt/Co-O/Pt trilayer exhibiting large reproducible resistance switching

被引：37

作者：

Shima, Hisashi ^{[1
]}

Takano, Fumiyoshi

Tamai, Yukio

Akinaga, Hiro

Inoue, Isao H.

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba Cent 2, Tsukuba, Ibaraki 3058568, Japan

[2] Sharp Co Ltd, Adv Mat Res Labs, Fukuyama, Hiroshima 7218522, Japan

[3] Natl Inst Adv Ind Sci & Technol, Correlated Electron Res Ctr, Tsukuba Cent 4, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 1-3期

关键词：

ReRAM; Co oxide; magnetron sputtering; non-volatile memory; CMOS compatibility; Pt electrode; oxide thin film; HIGHLY NONSTOICHIOMETRIC CO1-XO; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; CATION DIFFUSION; CO3O4; COO; NIO; CONDUCTIVITY; GROWTH;

D O I：

10.1143/JJAP.46.L57

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistance switching in Pt/Co-O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Cc-O/Pt trilayers. The resistance switching ratio exceeds 103, being sufficiently large for the resistance random access memory (RRAM). Co-O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal-oxide semiconductor process.

引用

页码：L57 / L60

页数：4

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