High-speed resistive switching of TiO2/TiN nano-crystalline thin film

被引：40

作者：

Fujimoto, M

Koyama, H

Hosoi, Y

Ishihara, K

Kobayashi, S

机构：

[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Shizuoka 4328561, Japan

[2] Sharp Co Ltd, Adv Technol Dev Labs, Nara 6328567, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 8-11期

关键词：

resistive switching; TiN; TiO2; nano-crystalline; platinum electrode; thin film;

D O I：

10.1143/JJAP.45.L310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-speed resistive switching was observed in a TiO2/TiN nano-crystal line thin film sandwiched between platinum electrodes. A low resistance state was achieved by applying a single negative 2.0-V amplitude 20-ns wide electric Pulse, while a high resistance state was achieved by applying a single positive 2.2-V amplitude 30-ns wide electric pulse. So-called forming process, heating bit material by Current flow to form conductive filament path before the resistive switching operation was not required. There was ail approximately 40,000% increase in resistive change that was repeatedly obtained in the system.

引用

收藏

页码：L310 / L312

页数：3

相关论文

共 13 条

[1] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[4] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 [J].

Fujii, T ;

Kawasaki, M ;

Sawa, A ;

Akoh, H ;

Kawazoe, Y ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :012107-1

[5] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[6] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

[7] Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface [J].

Sawa, A ;

Fujii, T ;

Kawasaki, M ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4073-4075

[8] Conductivity switching characteristics and reset currents in NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Choi, SK ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Byun, IS ;

Hwang, IR ;

Kim, SH ;

Park, BH .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[9] Reproducible resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Jeoung, EJ ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Hwang, IR ;

Kim, SH ;

Byun, IS ;

Kim, JS ;

Choi, JS ;

Park, BH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5655-5657

[10] Localized metallic conductivity and self-healing during thermal reduction of SrTiO3 -: art. no. 075508 [J].

Szot, K ;

Speier, W ;

Carius, R ;

Zastrow, U ;

Beyer, W .

PHYSICAL REVIEW LETTERS, 2002, 88 (07) :4