Electric-pulse-induced reversible resistance change effect in magnetoresistive films

被引：813

作者：

Liu, SQ

Wu, NJ

Ignatiev, A ^{[1
]}

机构：

[1] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

[2] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 19期

关键词：

D O I：

10.1063/1.126464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-dependent resistance changes of more than 1700% were observed under applied pulses of similar to 100 ns duration and as low as +/- 5 V magnitude. The resistance changes were cumulative with pulse number, were reversible and nonvolatile. This electrically induced effect, observed in CMR materials at room temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronics arena including high-density nonvolatile memory. (C) 2000 American Institute of Physics. [S0003-6951(00)00419-8].

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页码：2749 / 2751

页数：3

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