Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3

被引：313

作者：

Fujii, T

Kawasaki, M

Sawa, A ^{[1
]}

Akoh, H

Kawazoe, Y

Tokura, Y

机构：

[1] Natl Inst Adv Ind Sci & Technol, CERC, Tsukuba, Ibaraki 3058562, Japan

[2] JST, CREST, Kawaguchi, Saitama 3220012, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Univ Tokyo, Dept Appl Phys, Tokyo 1138658, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 01期

关键词：

D O I：

10.1063/1.1845598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO3 (SRO) film epitaxially grown on SrTi0.99Nb0.01O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n-type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 mus-10 ms duration. (C) 2005 American Institute of Physics.

引用

页码：012107 / 1

页数：3

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