Fabrication and characterization of Ba1-xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions

被引：92

作者：

Suzuki, S

Yamamoto, T

Suzuki, H

Kawaguchi, K

Takahashi, K

Yoshisato, Y

机构：

[1] Tsukuba Research Center, SANYO Electric Co., Ltd., Tsukuba, Ibaraki 305

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.365242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A reproducible process for fabricating Ba1-xKxBiO3/Nb-doped SrTiO3 (BKBO/STNO) all-oxide-type Schottky junctions has been established, and the electrical properties of the junctions have been investigated at room temperature. Improving the STNO surface conditions by high-temperature oxygen-annealing made it possible to fabricate junctions with good rectification properties. The current-voltage characteristics of the junctions were explained by conventional thermionic emission theory. Anomalous capacitance-voltage characteristics of the junctions were observed and were analyzed with a model taking into account the electric-field-dependent permittivity of STNO and the presence of the interfacial layer. The potential barrier profile of the BKBO/STNO interface was calculated and it can be concluded that this model quantitatively explains the capacitance-voltage characteristics. (C) 1997 American Institute of Physics.

引用

页码：6830 / 6836

页数：7

共 27 条

[1] CONTACT BETWEEN HIGH-TC SUPERCONDUCTOR AND SEMICONDUCTING NIOBIUM-DOPED SRTIO3
HASEGAWA, H
FUKAZAWA, T
AIDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2210 - L2212
[2] ELECTRICAL-PROPERTIES OF AU/NB-DOPED-SRTIO3 CONTACT
HASEGAWA, H
NISHINO, T
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1501 - 1505
[3] DIFFERENTIAL CAPACITANCE OF IN-SRTIO3-X CONTACTS - INFLUENCE OF THE ELECTRIC-FIELD-DEPENDENT PERMITTIVITY
HAYASHI, S
AOKI, R
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : 331 - 335
[4] PLANAR-TYPE BA1-XKXBIO3 JOSEPHSON TUNNEL-JUNCTIONS PREPARED ON SRTIO3 BICRYSTAL SUBSTRATES
INOUE, M
IMAEDA, S
TSUKINO, Y
FUJIMAKI, A
TAKAI, Y
HAYAKAWA, H
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (02) : 243 - 245
[5] PROPERTY CONTROL FOR HIGH-QUALITY BA1-XKXBIO3 EPITAXIAL THIN-FILMS PREPARED BY HIGH-PRESSURE REACTIVE RF-MAGNETRON SPUTTERING
IYORI, M
SUZUKI, S
SUZUKI, H
YAMANO, K
TAKAHASHI, K
USUKI, T
YOSHISATO, Y
NAKANO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5A): : 1946 - 1951
[6] MEASUREMENT OF NONLINEAR POLARIZATION OF KTAO3 USING SCHOTTKY DIODES
KAHNG, D
WEMPLE, SH
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2925 - &
[7] GROWTH OF YBA2CU3O7 THIN-FILMS ON MGO - THE EFFECT OF SUBSTRATE PREPARATION
MOECKLY, BH
RUSSEK, SE
LATHROP, DK
BUHRMAN, RA
LI, J
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (16) : 1687 - 1689
[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY ON THE SRTIO3 SURFACE-STRUCTURE
NAITO, M
SATO, H
[J]. PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 1994, 229 (1-2): : 1 - 11
[9] NEILE RC, 1972, J APPL PHYS, V43, P4657
[10] PERMITTIVITY OF STRONTIUM-TITANATE
NEVILLE, RC
MEAD, CA
HOENEISE.B
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2124 - &

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