MEASUREMENT OF NONLINEAR POLARIZATION OF KTAO3 USING SCHOTTKY DIODES

[1] [Anonymous], 1957, RECTIFYING SEMICONDU

[2] BELL RO, 1962, DA36039SC89126

[3] DEVONSHIRE AF, 1951, PHILOS MAG, V42, P1065

[4] DEVONSHIRE AF, 1949, PHILOS MAG, V40, P1040

[5] DIELECTRIC BEHAVIOR OF BARIUM TITANATE IN THE PARAELECTRIC STATE [J]. PHYSICAL REVIEW, 1955, 98 (04): : 1010 - 1014

[6] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[7] A FERROMAGNETIC CURIE POINT IN KTAO3 AT VERY LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (05): : 885 - 886

[8] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[9] SCHOTTKY W, 1942, Z PHYSIK, V118, P5

[10] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061

[1] [Anonymous], 1957, RECTIFYING SEMICONDU

[2] BELL RO, 1962, DA36039SC89126

[3] DEVONSHIRE AF, 1951, PHILOS MAG, V42, P1065

[4] DEVONSHIRE AF, 1949, PHILOS MAG, V40, P1040

[5] DIELECTRIC BEHAVIOR OF BARIUM TITANATE IN THE PARAELECTRIC STATE [J]. PHYSICAL REVIEW, 1955, 98 (04): : 1010 - 1014

[6] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[7] A FERROMAGNETIC CURIE POINT IN KTAO3 AT VERY LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (05): : 885 - 886

[8] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[9] SCHOTTKY W, 1942, Z PHYSIK, V118, P5

[10] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061