Fabrication and characterization of Ba1-xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions

被引：92

作者：

Suzuki, S

Yamamoto, T

Suzuki, H

Kawaguchi, K

Takahashi, K

Yoshisato, Y

机构：

[1] Tsukuba Research Center, SANYO Electric Co., Ltd., Tsukuba, Ibaraki 305

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.365242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A reproducible process for fabricating Ba1-xKxBiO3/Nb-doped SrTiO3 (BKBO/STNO) all-oxide-type Schottky junctions has been established, and the electrical properties of the junctions have been investigated at room temperature. Improving the STNO surface conditions by high-temperature oxygen-annealing made it possible to fabricate junctions with good rectification properties. The current-voltage characteristics of the junctions were explained by conventional thermionic emission theory. Anomalous capacitance-voltage characteristics of the junctions were observed and were analyzed with a model taking into account the electric-field-dependent permittivity of STNO and the presence of the interfacial layer. The potential barrier profile of the BKBO/STNO interface was calculated and it can be concluded that this model quantitatively explains the capacitance-voltage characteristics. (C) 1997 American Institute of Physics.

引用

页码：6830 / 6836

页数：7

共 27 条

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