ELECTRON TUNNELING IN INDIUM-SRTIO3 - NB SCHOTTKY BARRIERS

被引：29

作者：

SROUBEK, Z

机构：

[1] Department of Physics, University of California, Los Angeles, CA

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 21期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(69)90097-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The tunneling characteristics of In-SrTiO3: Nb Schottky barriers have been studied at 4°K for different concentrations of free carriers in SrTiO3. From the dependence of the incremental resistivity on the applied bias, the Fermi energies and the density-of-states effective mass md=1.5 mo of free carriers in SrTiO3 have been determined. © 1969.

引用

页码：1561 / &

共 9 条

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