Epitaxial diodes of a half-metallic ferromagnet on an oxide semiconductor

被引:50
作者
Postma, FM [1 ]
Ramaneti, R [1 ]
Banerjee, T [1 ]
Gokcan, H [1 ]
Haq, E [1 ]
Blank, DHA [1 ]
Jansen, R [1 ]
Lodder, JC [1 ]
机构
[1] Univ Twente, MESA Res Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
关键词
D O I
10.1063/1.1669255
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication and electrical characterization of epitaxial Schottky diodes of a half-metallic ferromagnet on an oxide semiconductor. La0.67Sr0.33MnO3 thin films are grown by pulsed laser deposition on niobium-doped SrTiO3 semiconductor substrates with two doping concentrations and a TiO2 surface termination. The current across the diodes is dominated by thermionic emission and shows high rectification and low reverse bias leakage. At room temperature, the Schottky barrier height is 0.95 eV (0.65 eV) and the ideality factor is 1.08 (1.18) for the diodes with a low (high) doped semiconductor. With decreasing temperature the Schottky barrier height decreases and the ideality factor increases. (C) 2004 American Institute of Physics.
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收藏
页码:7324 / 7326
页数:3
相关论文
共 16 条
  • [1] Bibes M, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.134416
  • [2] Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
    Bowen, M
    Bibes, M
    Barthélémy, A
    Contour, JP
    Anane, A
    Lemaitre, Y
    Fert, A
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (02) : 233 - 235
  • [3] Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
    Hanbicki, AT
    Jonker, BT
    Itskos, G
    Kioseoglou, G
    Petrou, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1240 - 1242
  • [4] The spin-valve transistor: a review and outlook
    Jansen, R
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (19) : R289 - R308
  • [5] Quasi-ideal strontium titanate crystal surfaces through formation of strontium hydroxide
    Koster, G
    Kropman, BL
    Rijnders, GJHM
    Blank, DHA
    Rogalla, H
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (20) : 2920 - 2922
  • [6] Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure
    Motsnyi, VF
    De Boeck, J
    Das, J
    Van Roy, W
    Borghs, G
    Goovaerts, E
    Safarov, VI
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (02) : 265 - 267
  • [7] Direct evidence for a half-metallic ferromagnet
    Park, JH
    Vescovo, E
    Kim, HJ
    Kwon, C
    Ramesh, R
    Venkatesan, T
    [J]. NATURE, 1998, 392 (6678) : 794 - 796
  • [8] Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor
    Schmidt, G
    Ferrand, D
    Molenkamp, LW
    Filip, AT
    van Wees, BJ
    [J]. PHYSICAL REVIEW B, 2000, 62 (08): : R4790 - R4793
  • [9] Sharma B.L., 1984, METAL SEMICONDUCTOR
  • [10] Intrinsic electrical properties of Au/SrTiO3 Schottky junctions
    Shimizu, T
    Okushi, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) : 7244 - 7251