The spin-valve transistor: a review and outlook

被引:144
作者
Jansen, R [1 ]
机构
[1] Univ Twente, SMI, MESA Res Inst, NL-7500 AE Enschede, Netherlands
关键词
D O I
10.1088/0022-3727/36/19/R01
中图分类号
O59 [应用物理学];
学科分类号
摘要
Combining ferromagnetic and semiconductor materials is a challenging route to create new options for electronic devices in which the spin of the electron is employed. The spin-valve transistor (SVT) is the first of such hybrid devices shown to work successfully. This review describes the basic science and technology of the SVT and derived devices, such as the magnetic tunnel transistor.
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页码:R289 / R308
页数:20
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