Reproducible switching effect in thin oxide films for memory applications

被引：991

作者：

Beck, A ^{[1
]}

Bednorz, JG ^{[1
]}

Gerber, C ^{[1
]}

Rossel, C ^{[1
]}

Widmer, D ^{[1
]}

机构：

[1] IBM Corp, Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 01期

关键词：

D O I：

10.1063/1.126902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns. The ratio between these two states is typically about 20 but can exceed six orders of magnitude. Once a low-impedance state has been achieved it persists without a power connection for months, demonstrating the feasibility of nonvolatile memory elements. Even multiple levels can be addressed to store two bits in such a simple capacitor-like structure. (C) 2000 American Institute of Physics. [S0003-6951(00)04327-8].

引用

页码：139 / 141

页数：3

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