High-speed resistive switching of TiO2/TiN nano-crystalline thin film

被引：40

作者：

Fujimoto, M

Koyama, H

Hosoi, Y

Ishihara, K

Kobayashi, S

机构：

[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Shizuoka 4328561, Japan

[2] Sharp Co Ltd, Adv Technol Dev Labs, Nara 6328567, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 8-11期

关键词：

resistive switching; TiN; TiO2; nano-crystalline; platinum electrode; thin film;

D O I：

10.1143/JJAP.45.L310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-speed resistive switching was observed in a TiO2/TiN nano-crystal line thin film sandwiched between platinum electrodes. A low resistance state was achieved by applying a single negative 2.0-V amplitude 20-ns wide electric Pulse, while a high resistance state was achieved by applying a single positive 2.2-V amplitude 30-ns wide electric pulse. So-called forming process, heating bit material by Current flow to form conductive filament path before the resistive switching operation was not required. There was ail approximately 40,000% increase in resistive change that was repeatedly obtained in the system.

引用

页码：L310 / L312

页数：3

共 13 条

[11] ELECTRICAL AND OPTICAL-PROPERTIES OF TIO2 ANATASE THIN-FILMS [J].