Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

被引：485

作者：

Watanabe, Y

Bednorz, JG ^{[1
]}

Bietsch, A

Gerber, C

Widmer, D

Beck, A

Wind, SJ

机构：

[1] IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland

[2] IBM Corp, Thomas J Watson Res Ctr, Res, Yorktown Heights, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 23期

关键词：

D O I：

10.1063/1.1377617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films. (C) 2001 American Institute of Physics.

引用

收藏

页码：3738 / 3740

页数：3

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