Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

被引:484
作者
Watanabe, Y
Bednorz, JG [1 ]
Bietsch, A
Gerber, C
Widmer, D
Beck, A
Wind, SJ
机构
[1] IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
[2] IBM Corp, Thomas J Watson Res Ctr, Res, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1063/1.1377617
中图分类号
O59 [应用物理学];
学科分类号
摘要
Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films. (C) 2001 American Institute of Physics.
引用
收藏
页码:3738 / 3740
页数:3
相关论文
共 26 条
[1]   SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].
ARGALL, F .
SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&
[2]   Current switching of resistive states in magnetoresistive manganites [J].
Asamitsu, A ;
Tomioka, Y ;
Kuwahara, H ;
Tokura, Y .
NATURE, 1997, 388 (6637) :50-52
[3]   SWITCHING EFFECTS IN ELECTRON-BEAM-DEPOSITED POLYMER-FILMS [J].
BALLARD, WP ;
CHRISTY, RW .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 17 (01) :81-88
[4]   PHOTOINDUCED PHENOMENA IN Sr1-xCaxTiO3, 0 ≤ x ≤ 0.12 [J].
Basun, S. A. ;
Bianchi, U. ;
Bursian, V. E. ;
Kaplyanskii, A. A. ;
Kleemann, W. ;
Markovin, P. A. ;
Sochava, L. S. ;
Vikhnin, V. S. .
FERROELECTRICS, 1996, 183 :255-264
[5]   Reproducible switching effect in thin oxide films for memory applications [J].
Beck, A ;
Bednorz, JG ;
Gerber, C ;
Rossel, C ;
Widmer, D .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141
[6]   Electrical testing of gold nanostructures by conducting atomic force microscopy [J].
Bietsch, A ;
Schneider, MA ;
Welland, ME ;
Michel, B .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1160-1170
[7]   OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN CHALCOGENIDE GLASSES [J].
BISHOP, SG ;
STROM, U ;
TAYLOR, PC .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1346-1350
[8]   ELECTROCOLORATION IN SRTIO - VACANCY DRIFT AND OXIDATION-REDUCTION OF TRANSITION METALS [J].
BLANC, J ;
STAEBLER, DL .
PHYSICAL REVIEW B, 1971, 4 (10) :3548-&
[9]   VALENCE-BAND SPLITTING OF SRTIO3 [J].
BLAZEY, KW ;
AGUILAR, M ;
BEDNORZ, JG ;
MULLER, KA .
PHYSICAL REVIEW B, 1983, 27 (09) :5836-5838
[10]   Hydrogen electrochemistry and stress-induced leakage current in silica [J].
Blöchl, PE ;
Stathis, JH .
PHYSICAL REVIEW LETTERS, 1999, 83 (02) :372-375