Electronic, thermal, and elastic properties of Ti3Si1-xGexC2 solid solutions -: art. no. 085104

被引：85

作者：

Finkel, P

Seaman, B

Harrell, K

Palma, J

Hettinger, JD

Lofland, SE

Ganguly, A

Barsoum, MW

Sun, Z

Li, S

Ahuja, R

机构：

[1] Rowan Univ, Dept Phys & Astron, Glassboro, NJ 08028 USA

[2] Drexel Univ, Dept Mat Engn, Philadelphia, PA 19104 USA

[3] Rhein Westfal TH Aachen, D-5100 Aachen, Germany

[4] Uppsala Univ, Dept Phys, Uppsala, Sweden

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.70.085104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report on the electronic, elastic, and thermal properties of Ti3Si1-xGexC2. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, Ti3Si1-xGexC2 is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to Ge substitution, with the exception of the thermal expansion, which is smallest in x=1.

引用

页码：085104 / 1

页数：6

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