Structural stability for UV irradiation and dielectric properties of a-CNx films

被引：5

作者：

Itoh, T ^{[1
]}

Aono, M ^{[1
]}

Yoshida, S ^{[1
]}

Hattori, S ^{[1
]}

Katsuno, T ^{[1
]}

Nitta, S ^{[1
]}

Nonomura, S ^{[1
]}

机构：

[1] Gifu Univ, Dept Elect Engn, Gifu 5011193, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00953-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two topics on amorphous carbon nitride (a-CN,) films prepared with 0.52 less than or equal to x less than or equal to 0.86 are studied and discussed. (a) Structural stability for ultraviolet (UV) light irradiation is measured by X-ray photoelectron spectroscopy (XPS). The x at the surface increases after UV light irradiation in air. The amplitude of C-ls peak related to C-N bond increased. Its binding energy shifts to larger energy after irradiation as does the N-1s peak also. The photo-induced change in a-CN, is discussed comparing with the properties of a-C:H. (b) Structural effect on the refractive indices, n: is studied by Raman spectroscopy. The it decreases with increasing x, which properties could be applied to a low dielectric constant insulators for ultra large-scale integrated (ULST) technology. However, n is not correlated with the D and G Raman peaks. The structural effect on n and an application of a-CN, to an insulator for ULSI are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：825 / 829

页数：5

共 14 条

[1] Amorphous carbon nitride films as a candidate for low dielectric constant materials [J].