Si/SiGe/Si pMOS performance - alloy scattering and other considerations

被引：33

作者：

Whall, TE ^{[1
]}

Parker, EHC ^{[1
]}

机构：

[1] Univ Warwick, Coventry CV4 7AL, W Midlands, England

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

关键词：

silicon germanium; electrical properties; field effect devices;

D O I：

10.1016/S0040-6090(00)00883-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Charge-carrier scattering in pseudomorphic p-channel Si/SiGe/Si heterostructures is reviewed. It is argued that current room-temperature field-effect device performance is limited by materials quality, particularly interface roughness and compositional inhomogeneity, rather than random alloy scattering. The way ahead is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

收藏

页码：297 / 305

页数：9

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