THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS

被引：11

作者：

BRIGHTEN, JC ^{[1
]}

HAWKINS, ID ^{[1
]}

PEAKER, AR ^{[1
]}

KUBIAK, RA ^{[1
]}

PARKER, EHC ^{[1
]}

WHALL, TE ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 07期

关键词：

Band structure - Capacitance measurement - Charge carriers - Mathematical techniques - Semiconducting germanium - Semiconducting silicon - Voltage measurement;

D O I：

10.1088/0268-1242/8/7/048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0 < y < 0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.

引用

页码：1487 / 1489

页数：3

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